Nondestructive and quantitative depth profiling analysis of ion bombarded Ta2O5 surfaces by medium energy ion scattering spectroscopy

Author:

Lee J. C.,Chung C. S.,Kang H. J.,Kim Y. P.,Kim H. K.,Moon D. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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3. Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film;Thin Solid Films;2010-02

4. Ion Beam Sputtering for High Resolution Depth Profiling;Journal of Surface Analysis;2009

5. The surface transient effect in the Si sputtering yield by low energy O2+ and Ar+ ion bombardments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06

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