The surface transient effect in the Si sputtering yield by low energy O2+ and Ar+ ion bombardments
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Ion beam crystallography of surfaces and interfaces
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1. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions;Eurasian Journal of Physics and Functional Materials;2023-12-20
2. Ion beam processing with an ultra-low energy Ar+ micro-polisher: From fundamental understanding to process optimisation;Applied Surface Science;2023-12
3. Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics;Beilstein Journal of Nanotechnology;2023-08-01
4. Observation of the interfacial layer in HfO2(10nm)/Si by high-resolution RBS in combination with grazing angle sputtering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
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