Real‐time monitoring of homoepitaxial and heteroepitaxial processes by p‐polarized reflectance spectroscopy

Author:

Dietz N.,Miller A.,Bachmann K. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage;Journal of Crystal Growth;2009-01

2. Electronic materials growth: A retrospective and look forward;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-09

3. Real-time optical characterization of thin film growth;Materials Science and Engineering: B;2001-10

4. Real-time optical control of Ga1−xInxP film growth by p-polarized reflectance;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

5. Representation of GaP formation by a reduced order surface kinetics model using p-polarized reflectance measurements;Journal of Applied Physics;1999-07

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