Molecular-beam-epitaxy growth of high-quality InGaAsN∕GaAs quantum well lasers emitting at 1.3 μm-Reference-Cited by-同舟云学术

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Molecular-beam-epitaxy growth of high-quality InGaAsN∕GaAs quantum well lasers emitting at 1.3 μm

Published:2004 Issue:6 Volume:22 Page:2663
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wang J. S.,Hsiao R. S.,Lin G.,Lin K. F.,Liu H. Y.,Lai C. M.,Wei L.,Liang C. Y.,Chi J. Y.,Kovsh A. R.,Maleev N. A.,Livshits D. A.,Chen J. F.,Yu H. C.,Ustinov V. M.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen incorporation into GaAsN and InGaAsN layers grown by liquid-phase epitaxy;physica status solidi (c);2013-03-18

2. Structural and electrical characteristics of InGaAsN layers grown by LPE;Journal of Crystal Growth;2012-05

3. Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy;Semiconductor Science and Technology;2010-12-17

4. Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing;Nanotechnology;2008-11-18

5. Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation;Journal of Applied Physics;2008-11-15

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