Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/19/i=49/a=495201/pdf
Reference19 articles.
1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Critical layer thickness for self-assembled InAs islands on GaAs
4. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
5. Multidimensional quantum well laser and temperature dependence of its threshold current
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