Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications-Reference-Cited by-同舟云学术

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Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications

Published:2005 Issue:1 Volume:23 Page:80
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ma Dongjoon,Park Sungho,Seo Bum-Seok,Choi SangJun,Lee Naesung,Lee Jung-Hyun

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and structures of tantalum chloride and tantalum aryloxide compounds bearing bidentate and tridentate pyrrole‐amine ligands;Journal of the Chinese Chemical Society;2021-11-04

2. Synthesis of novel volatile niobium precursors containing carboxamide for Nb2O5 thin films;Polyhedron;2021-05

3. Corrosion Resistance of Atomic Layer Deposition-Generated Amorphous Thin Films;ACS Applied Materials & Interfaces;2016-10-26

4. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor;physica status solidi (RRL) - Rapid Research Letters;2016-08-29

5. Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation;Applied Physics Letters;2015-11-23

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