Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach

Author:

Franquet Alexis,Douhard Bastien,Conard Thierry,Melkonyan Davit,Vandervorst Wilfried

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Orbitrap™-SIMS analysis of advanced semiconductor inorganic structures;Vacuum;2022-08

2. Critical need and future directions of SIMS depth profiling in CMOS fabrication;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-05

3. Industrial application of atom probe tomography to semiconductor devices;Scripta Materialia;2018-04

4. Dopant, composition and carrier profiling for 3D structures;Materials Science in Semiconductor Processing;2017-05

5. Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry;Technical Physics Letters;2017-05

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