Inductively coupled plasma etching of bulk, single-crystal Ga2O3-Reference-Cited by-同舟云学术

Inductively coupled plasma etching of bulk, single-crystal Ga2O3

Published:2017-05 Issue:3 Volume:35 Page:031205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Yang Jiancheng,Ahn Shihyun,Ren Fan,Pearton Stephen¹,Khanna Rohit,Bevlin Kristen,Geerpuram Dwarakanath,Kuramata Akito²

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

2. Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4982714

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

2. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

3. Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-07

4. β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV;Transactions on Electrical and Electronic Materials;2024-04-03

5. Hybrid simulation of the plasma characteristics in a dual‐frequency dual‐antenna inductively coupled plasma discharge;Contributions to Plasma Physics;2023-10-12