Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures-Reference-Cited by-同舟云学术

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Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures

Published:1993-07 Issue:4 Volume:11 Page:1332-1336
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Awadelkarim O. O.,Gu T.,Ditizio R. A.,Mikulan P. I.,Fonash S. J.,Rembetski J. F.,Chan Y. D.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578549

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study and optimize on the process of Floating gate with dry etching;Engineering Research Express;2021-08-09

2. Sub-50-nm self-assembled nanotextures for enhanced broadband antireflection in silicon solar cells;Nature Communications;2015-01-21

3. Electrical Degradation and Recovery of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors With Various Metal Gate Patterns;IEEE Transactions on Electron Devices;2012-12

4. Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process;IEEE Transactions on Electron Devices;2011-08

5. Effect of Oxygen on the Formation of Dryetching Damage Introduced into Si-Substrate;MRS Proceedings;1998-01

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