Fabrication of a 1 Mbit dynamic random access memory with four levels using x-ray lithography

Author:

Hoffman S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fabrication of 0.2 μm large scale integrated circuits using synchrotron radiation x-ray lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11

2. Lithography for micro-electronics;Radiation Physics and Chemistry;1995-03

3. Lithography;Fundamentals of Semiconductor Processing Technology;1995

4. Applicability test for synchrotron radiation x-ray lithography in 64-Mb dynamic random access memory fabrication processes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11

5. Operating experience with the Helios compact storage ring at IBM;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1994-08

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