Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature-Reference-Cited by-同舟云学术

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Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature

Published:2005 Issue:3 Volume:23 Page:1194
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Torabi A.,Hoke W. E.,Mosca J. J.,Siddiqui J. J.,Hallock R. B.,Kennedy T. D.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of polymer based novel organic–inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures;Materials Science and Engineering: B;2021-10

2. Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD;Materials Today: Proceedings;2021

3. Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE;Journal of Materials Science: Materials in Electronics;2019-09-28

4. Graphene-Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy;Small;2017-03-15

5. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01

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