Effect of growth conditions on interface stability and thermophysical properties of sputtered Cu films on Si with and without WTi barrier layers-Reference-Cited by-同舟云学术

Effect of growth conditions on interface stability and thermophysical properties of sputtered Cu films on Si with and without WTi barrier layers

Published:2017-03 Issue:2 Volume:35 Page:022201
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Souli Imane¹,Terziyska Velislava L.¹,Keckes Jozef²,Robl Werner³,Zechner Johannes⁴,Mitterer Christian¹

Affiliation:

1. Department Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Straße 18, A-8700 Leoben, Austria

2. Department of Materials Physics, Montanuniversität Leoben, Jahnstraße 12, 8700 Leoben, Austria

3. Infineon Technologies Germany AG, Wernerwerkstraße 2, 93049 Regensburg, Germany

4. Kompetenzzentrum Automobil-und Industrie-Elektronik GmbH, Europastraße 8, 9524 Villach, Austria

Funder

Kärntner Wirtschaftsförderungsfonds (KWF)

Österreichische Forschungsförderungsgesellschaft (FFG)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4975805

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