High‐temperature effects on a CoSi2/poly‐Si metal oxide semiconductor gate configuration-Reference-Cited by-同舟云学术

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High‐temperature effects on a CoSi2/poly‐Si metal oxide semiconductor gate configuration

Published:1990-05 Issue:3 Volume:8 Page:3011-3013
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Nygren Stefan,Johansson Stefan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576621

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology;Metallic Films for Electronic, Optical and Magnetic Applications;2014

2. Improvement in Thermal Stability of Chemical Vapor Deposition CoSi2/Polycrystalline Silicon Using TiN and Amorphous Silicon Interlayers;Japanese Journal of Applied Physics;2006-02-08

3. Effect of annealing on CoSi2 thin films prepared by magnetron sputtering;Materials Science and Engineering: B;2005-05

4. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11

5. Effect of Ion Implantation on Layer Inversion of Ni Silicided Poly-Si;Journal of The Electrochemical Society;2002

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