Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy

Published:2006 Issue:3 Volume:24 Page:1591
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Pulzara-Mora A.,Meléndez-Lira M.,Falcony-Guajardo C.,López-López M.,Vidal M. A.,Jiménez-Sandoval S.,Aguilar-Frutis M. A.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2023-03

2. Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy;Thin Solid Films;2022-04

3. Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy;Thin Solid Films;2020-05

4. Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs;Physica B: Condensed Matter;2010-05

5. Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation;Physical Review B;2009-08-25

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