High frequency characterisation of double drift region InP and GaAs diodes-Reference-Cited by-同舟云学术

High frequency characterisation of double drift region InP and GaAs diodes

Published:1989-05 Issue:5 Volume:48 Page:437-443
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Banerjee J. P.,Pati S. P.,Roy S. K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00619715.pdf

Reference18 articles.

1. J.P. Banerjee, S.P. Pati, S.K. Roy: Indian J. Pure Appl. Phys.21, 661 (1983)

2. S.M. Sze, R.M. Ryder: Proc. IEEE59, 1140 (1972)

3. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal: Proc. of the NASECODE-I Conf. on Numerical Analysis of Semiconductor Devices (Dublin, Ireland 1979) p. 266

4. D.N. Dutta, S.P. Pati, J.P. Banerjee, B.B. Pal, S.K. Roy: IEEE Trans. ED-29, 1819 (1982)

5. L.W. Cook, G.E. Bulman, G.E. Stillman: Appl. Phys. Lett.40, 589 (1982)

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On Some Modern Simulation Techniques for Studying THz ATT Sources;Lecture Notes in Electrical Engineering;2021-09-22

2. Cutting-Edge Technologies for Terahertz Wave Generation: A Brief History from the Inception Till the Present State of The Art;Lecture Notes in Electrical Engineering;2021-09-22

3. W-Band InP DDR IMPATTs for High Current Operation Near Avalanche Resonance;Computers and Devices for Communication;2021

4. Material Systems for Realizing Heterojunction IMPATT Sources for Generating Terahertz Waves;Lecture Notes in Electrical Engineering;2021

5. Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes;Nanoscience & Nanotechnology-Asia;2020-08-26