Recent Trends and Challenges on Low-Power FinFET Devices
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-32-9690-9_55
Reference35 articles.
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3. Lu, D.D., Niknejad, A.M., Hu, C., Lin, C.-H.: Compact modeling of variation in FinFET SRAM cells. In: IEEE Design & Test of Computers, pp. 43–50, (March/April 2010)
4. Hu, J., Zhang, Y., Han, C., Zhang, W.: An investigation of super-threshold FinFET logic circuits operating on medium strong inversion regions. Open Electr. Electron. Eng. J. 9(1) (2015)
5. Rostami, M., Mohanram, K.: Dual-Vth independent-gate FinFETs for low power logic circuits. In: IEEE Tran. CAD Integr. Circuits Syst. 30(3), 337–349 (March 2011)
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