A 1.2V, Radiation Hardened 14T SRAM Memory Cell for Aerospace Applications
Author:
Affiliation:
1. VIT-AP University,School of Electronics Engineering,Amaravati,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10028779/10028780/10028951.pdf?arnumber=10028951
Reference30 articles.
1. Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices
2. Satellite Anomalies from Galactic Cosmic Rays
3. Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application
4. Cosmic Ray Induced in MOS Memory Cells
5. Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications
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1. A robust radiation resistant SRAM cell for space and military applications;Integration;2024-05
2. An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors;Microelectronics Reliability;2024-01
3. A Soft Error Upset Recovery SRAM Cell for Aerospace and Military Applications;TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON);2023-10-31
4. Soft Error Immune with Enhanced Critical Charge SIC14T SRAM Cell for Avionics Applications;2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration (VLSI-SoC);2023-10-16
5. Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications;Microsystem Technologies;2023-07-12
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