Comparison of Total Ionizing Dose Effect on Tolerance of SCL 180 nm Bulk and SOI CMOS Using TCAD Simulation
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-6737-5_5
Reference37 articles.
1. Attix FH (1986) Introduction to radiological physics and radiation dosimetry. Wiley, New York
2. King MP et al (2017) Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. IEEE Trans Nucl Sci 64(1):285–292. https://doi.org/10.1109/TNS.2016.2634538
3. Chen RM et al (2017) Effects of total-ionizing-dose Irradiation on SEU- and SET-induced soft errors in bulk 40-nm sequential circuits. IEEE Trans Nucl Sci 64(1):471–476. https://doi.org/10.1109/TNS.2016.2614963
4. Zhang L et al (2017) Single event upset sensitivity of d-flip flop: comparison of PDSOI with bulk Si at 130 nm technology node. IEEE Trans Nucl Sci 64(1):683–688. https://doi.org/10.1109/TNS.2016.2636338
5. Schwank JR et al (2000) Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides. IEEE Trans Nucl Sci 47(6):2175–2182
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Conventional CMOS technology based RadFET dosimeter for Ionizing Radiation Detection for High Energy Applications;2024 IEEE 9th International Conference for Convergence in Technology (I2CT);2024-04-05
2. Monte Carlo Simulation Analysis for Irradiation Damage by Cobalt Ion in Cadmium Selinde Group II-VI Semiconductor;2024 IEEE 9th International Conference for Convergence in Technology (I2CT);2024-04-05
3. Monto-Carlo investigation of photonic devices degradation from Cobalt-induced irradiation using MoS2 for high-speed sensing and communication;2024 IEEE 9th International Conference for Convergence in Technology (I2CT);2024-04-05
4. Extensive thermal-range simulation study of interface traps and oxide charges in an oxide-optimized MOS-capacitive radiation sensor for space applications;Journal of the Korean Physical Society;2024-02-26
5. Design and Optimization of MOS Capacitor based Radiation Sensor for Space Applications;Arabian Journal for Science and Engineering;2024-01-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3