Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

Author:

King M. P.,Wu X.,Eller M.,Samavedam S.,Shaneyfelt M. R.,Silva A. I.,Draper B. L.,Rice W. C.,Meisenheimer T. L.,Felix J. A.,Zhang E. X.,Haeffner T. D.,Ball D. R.,Shetler K. J.,Alles M. L.,Kauppila J. S.,Massengill L. W.

Funder

Sandia’s Laboratory-Directed Research and Development program

Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration

Vanderbilt University

Defense Threat Reduction Agency (DTRA)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

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