Linearity Analysis of Line Tunneling Based TFET for High-Performance RF Applications
Author:
Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-5341-7_72
Reference20 articles.
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3. Paras N, Chauhan SS (2019) Temperature sensitivity analysis of vertical tunneling based dual metal Gate TFET on analog/RF FOMs. Appl Phys A Mater Sci Process 125(5):316
4. Jain P, Yadav C, Agarwal A, Chauhan YS (2017) Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour. Solid State Electron 134:74–81
5. Paras N, Chauhan SS (2019) Vertical tunneling based tunnel field effect transistor with workfunction engineered hetero-gate to enhance DC characteristics. J Nanoelectron Optoelectron 14(1):50–53
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