Temperature sensitivity analysis of vertical tunneling based dual metal Gate TFET on analog/RF FOMs
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-019-2621-x.pdf
Reference30 articles.
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3. M. R. Salehi, E. Abiri, S. E. Hosseini and B. Dorostkar, Analysis and optimization of tunnel FET with band gap engineering. In: 1st Iranian Conference on Electrical Engineering (ICEE), Iran, May 2013
4. P. Jain, P. Rastogi, C. Yadav, A. Agarwal, Y.S. Chauhan, Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: thickness scaling. J. Appl. Phys. 122(1), 0145021–0145027 (2017)
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