Author:
Jain Prateek,Yadav Chandan,Agarwal Amit,Chauhan Yogesh Singh
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011
2. Huang Q, Zhan Z, Huang R, Mao X, Zhang L, Qiu Y, et al. Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation. In: Proc IEEE int electron devices meeting; 2011. p. 16.2.1–4.
3. Huang Q, Huang R, Zhan Z, Qiu Y, Jiang W, Wu C, et al. A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration. In: Proc IEEE int electron devices meeting; 2012. p. 8.5.1–4.
4. Methods to enhance the performance of InGaAs/InP heterojunction tunnel FETs;Sant;IEEE Trans Electron Dev,2016
5. Zhu M, Tan SS, Toh EH, Quek E. Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current. US Patent 12 587 511; April 14 2011.
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