Comparative Analysis of Current Sense Amplifier Architectures for SRAM at 45 nm Technology Node
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-3250-4_48
Reference14 articles.
1. Rawat B, Mittal P (2021) A 32 nm single-ended single-port 7T static random-access memory for low power utilization. Semicond Sci Technol 36:095006. https://doi.org/10.1088/1361-6641/ac07c8
2. Rawat B, Mittal P (2022) A comprehensive analysis of different 7T SRAM topologies to design a 1R1 W bit interleaving enabled and half select free cell for 32 nm technology node. In: Proceedings of the royal society a: mathematical, physical and engineering sciences, p 478. https://doi.org/10.1098/rspa.2021.0745
3. Rawat B, Mittal P (2022) A reliable and temperature variation tolerant 7T SRAM cell with single bitline configuration for low voltage application. Circ Syst Signal Process 41:2779–2801. https://doi.org/10.1007/s00034-021-01912-5
4. Divya MP (2021) Parametric extraction and comparison of different voltage-mode based sense amplifier topologies. In: Proceedings of the 2021 3rd international conference on advances in computing, communication control and networking, ICAC3N 2021. https://doi.org/10.1109/ICAC3N53548.2021.9725671
5. Bharti R, Mittal P (2021) Comparative analysis of different types of inverters for low power at 45 nm. In: Proceedings of the 2021 3rd international conference on advances in computing, communication control and networking, ICAC3N 2021. https://doi.org/10.1109/ICAC3N53548.2021.9725619
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1. A single ended, single port configuration based 9 T SRAM cell for stability enhancement;Physica Scripta;2023-10-23
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