Design and Comparative Power Analysis of Conventional 6T SRAM with 7T2M nv-SRAM at 180 nm Technology-Reference-Cited by-同舟云学术

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Design and Comparative Power Analysis of Conventional 6T SRAM with 7T2M nv-SRAM at 180 nm Technology

Published:2021-12-07 Issue: Volume: Page:373-383
ISSN:2194-5357
Container-title:Advances in Intelligent Systems and Computing
language:
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Author:

Yadav Manisha,Handa Palak

Publisher

Springer Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-16-4369-9_37

Reference23 articles.

1. Chua, L.: Memristor—The missing circuit element. IEEE Trans. Circ. Theory 18(5), 507–519 (1971). https://doi.org/10.1109/tct.1971.1083337

2. Chua, L.: Resistance switching memories are memristors. App. Phys. A 102(4), 765–783 (2011). https://doi.org/10.1007/s00339-011-6264-9

3. Chiu, P., et al.: Low store energy, Low VDDmin, 8T2R Nonvolatile latch and SRAM with vertical-stacked resistive memory (Memristor) devices for low power mobile applications. IEEE J. Solid-State Circ. textbf47(6), 1483–1496 (2012). https://doi.org/10.1109/jssc.2012.2192661

4. Sarwar, S., Saqueb, S., Quaiyum, F., Rashid, A.: Memristor-based nonvolatile random access memory: hybrid architecture for low power compact memory design. IEEE Access 1, 29–34 (2013). https://doi.org/10.1109/access.2013.2259891

5. Panguluru, S., Pandey, J.G.: 2020 24th International Symposium on VLSI Design and Test (VDAT), pp. 1–4. Bhubaneswar, India (2020)

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1. Optimizing Power Efficiency in SRAM Cells through Memristor-Based Architectures;2024 International Conference on Machine Intelligence and Smart Innovation (ICMISI);2024-05-12

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