Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications-Reference-Cited by-同舟云学术

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Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications

Published:2012-06 Issue:6 Volume:47 Page:1483-1496
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Chiu Pi-Feng,Chang Meng-Fan,Wu Che-Wei,Chuang Ching-Hao,Sheu Shyh-Shyuan,Chen Yu-Sheng,Tsai Ming-Jinn

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/6203507/06197240.pdf?arnumber=6197240

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