Electrical and RF Performance Enhancement of Pocket Doped Junctionless Transistor Using Dual Metal Gate
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-0312-0_22
Reference27 articles.
1. Lee C, Borne A, Ferain I, Afzalian A, Yan R, Akhavan ND, Razavi P, Colinge J (2010) High-temperature performance of silicon junctionless MOSFETs. IEEE Trans Electron Dev 57(3):620–625
2. Colinge J, Lee C, Afzalian A, Akhavan N, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nat Nanotechnol 5(3):225–229
3. Lee C, Ferain I, Afzalian A, Yan R, Akhavan N, Razavi P, Colinge J (2010) Performance estimation of junctionless multigate transistors. Solid State Electron 54(2):97–103
4. Lee CW, Nazarov AN, Ferain I, khavan, ND, Yan R, Razavi P (2010) Low sub threshold slope in junctionless multi gate transistor. Appl Phys Lett 96(10):102106-1–102106-3
5. Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Colinge JP (2009) Junction less multigate field-effect transistor. Appl Phys Lett 94(5):053511-1–053511-2
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