Effects of Dimensional Variations on Short Channel Parameters in 14 nm Channel Length TG–SOI FinFETs
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-2004-2_4
Reference11 articles.
1. Pei G, Kedzierski J, Oldiges P, Ieong M, Kan EC (2002) FinFET design considerations based on 3-D simulation and analytical modeling. IEEE Trans. on Electron Devices 49(8):1411–1419
2. Roy K, Mukhopadhyay S, Mahmoodi-Meimand H (2003) Leakage current mechanisms and leakage reduction techniques in deep submicrometer CMOS circuits. Proc IEEE 91(2):305–327
3. Schaller RR (1997) Moore’s law: past, present and future. IEEE Spectr 34(6):52–59
4. Colinge JP (2008) FinFETs and Other Multi Gate Transistors. Springer, New York, USA
5. Hisamoto D, Lee WC, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King TJ, Bokor J, Hu C (2000) FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans Electron Devices 47(12):2320–2325
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and Performance Analysis of 3-Fin 08 nm Physical Gate Length SOI FinFETs Employing Gate Stacked High-K Dielectrics;2023 IEEE 3rd International Conference on Applied Electromagnetics, Signal Processing, & Communication (AESPC);2023-11-24
2. Substrate Noise Evaluation and Reduction of N-MOSFET Using Optimized Silicone-On-Insulator based on Seagull optimization algorithm;2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC);2023-05-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3