Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*-Reference-Cited by-同舟云学术

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Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*

Published:1991-08 Issue:2 Volume:53 Page:95-101
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Lang M.,Pensl G.,Gebhard M.,Achtziger N.,Uhrmacher M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00323866.pdf

Reference20 articles.

1. D.V. Lang: J. Appl. Phys. 45, 3023 (1974)

2. Topics Appl. Phys.;D.V. Lang,1979

3. G. Pensl: In Landolt-Börnstein, New Series III/22b, ed. by M. Schulz (Springer, Berlin, Heidelber 1989) p. 51ff.

4. J.W. Petersen, J. Nielsen: Appl. Phys. Lett. 56, 1122 (1990)

5. M. Lang, G. Pensl, M. Gebhard, M. Uhrmacher: Verhandl. DPG(VI) 25, 824 (1990)

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