Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−x Ge x
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-012-4879-2.pdf
Reference11 articles.
1. Song J J, Zhang H M, Hu H Y, et al. Calculation of band structure in (101)-biaxially strained Si. Sci China Ser G-Phys Mech Astron, 2009, 52(4): 546–550
2. Olsen S H, Yan L, Aqaiby R, et al. Strained Si/SiGe MOS technology: Improving gate dielectric integrity. Microelectron Eng, 2009, 86(3): 218–223
3. Song J J, Zhang H M, Hu H Y, et al. Valence band structure of strained Si/(111)Si1−x Gex. Sci China-Phys Mech Astron, 2010, 53(3): 454–457
4. Song J J, Zhang H M, Hu H Y, et al. Determination of conduction band edge characteristics of strained Si/Si1−x Gex. Chin Phys, 2007, 16(12): 3827–3831
5. Song J J, Zhang H M, Dai X Y, et al. Band structure of strained Si/(111)Si1−x Gex: A first principles investigation. Acta Phys Sin, 2008, 57(9): 5918–5922
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