Valence band structure of strained Si/(111)Si1−x Ge x
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-010-0093-2.pdf
Reference9 articles.
1. Song J J, Zhang H M, Hu H Y, et al. Calculation of band structure in (101)-biaxially strained Si. Sci China Ser G-Phys Mech Astron, 2009, 52: 546–550
2. Olsen S H, Yan L, Aqaiby R, et al. Strained Si/SiGe MOS technology: Improving gate dielectric integrity. Microelectron Eng, 2009, 86: 218–223
3. Song J J, Zhang H M, Hu H Y, et al. Determination of conduction band edge characteristics of strained Si/Si1−x Gex. Chin Phys, 2007, 16: 3827–3831
4. Guillaume T, Mouis M. Calculations of hole mass in [110]-uniaxially strained silicon for the stress-engineering of p-MOS transistors. Solid-State Electron, 2006, 50: 701–708
5. Paul D J. Si/SiGe heterostructures: From material and physics to devices and circuits. Semicond Sci Technol, 2004, 19: 75
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