Author:
Noor ul Huda Khan Asghar H. M.,Gilani Zaheer Abbas,Awan M. S.,Ahmad I.,Tan Yi
Publisher
Springer Science and Business Media LLC
Reference20 articles.
1. Indium gallium nitride—Wikipedia, the free encyclopedia
2. Rothenberger J.B., Montenegro D.E., Prelas M.A., Ghosh T.K., Tompson R.V., Loyalka S.K.: A Q-DLTS investigation of aluminum nitride surface termination. J. Mater. Res. 27(08), 1198–1204 (2012)
3. Prelas, M.A.; Saha, K.: Wide band-gap electronic materials. In: S. Lee (ed.) Encyclopedia of Chemical Processing, 3227. CRC Press, Boca Raton (2005)
4. Strite S., Morkoç H.: GaN, AlN, and InN: a review. J. Vac. Sci. Technol. B 10(4), 1237–1266 (1992)
5. Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Markov, A.V.; Lee, C.-R.; Lee, I.-H.; Kolin, N.G.; Merkurisov, D.I.; Boiko, V.M.; Wright, J.S.; Pearton, S.J.: Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects. In: MRS Online Proceedings Library, 955, 245–247 (2006)
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献