Unveiling anisotropic behavior in 3C-SiC via in situ nano-scratching-Reference-Cited by-同舟云学术

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Unveiling anisotropic behavior in 3C-SiC via in situ nano-scratching

Published:2023-10-12 Issue:11 Volume:66 Page:4326-4333
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Huang Junquan,Chen Yujun,Wang Chong,Li Penghui,Tong Ke,Kang Mengke,Jin Tianye,Hu Wentao,Chen Junyun,Ma Mengdong,Xu Bo,Nie Anmin,Tian Yongjun

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-023-2621-3.pdf

Reference30 articles.

1. Pham TA, Hold L, lacopi A, et al. Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures. Sens Actuat A-Phys, 2021, 317: 112474

2. Talwar DN. On the pressure-dependent phonon characteristics and anomalous thermal expansion coefficient of 3C-SiC. Mater Sci Eng-B, 2017, 226: 1–9

3. Lin L, Chen Y, Tao H, et al. Electronic structures and ferromagnetism of 3C-SiC doped with (Fe, Co) double-impurities by first-principles calculations. Mater Sci Semicond Proc, 2021, 129: 105779

4. Suzuki H, Okada M, Asai W, et al. Micro milling tool made of nano-polycrystalline diamond for precision cutting of SiC. CIRP Ann, 2017, 66: 93–96

5. Hay J. Measuring substrate-independent modulus of dielectric films by instrumented indentation. J Mater Res, 2009, 24: 667–677

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three new 7Tri-SiC polymorphs with innovation form and excellent stability: First-principles calculation;Journal of Physics and Chemistry of Solids;2024-09

2. Analysis of single-crystal 3C-SiC subsurface damage mechanisms based on molecular dynamics indentation speed;AIP Advances;2024-08-01

3. Ductile-Brittle Transition Mechanism of Highly-Oriented 3c-Sic in Elid;2024

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