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Electronic structures and ferromagnetism of 3C-SiC doped with (Fe, Co) double-impurities by first-principles calculations

  • Published:2021-07 Issue: Volume:129 Page:105779
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Lin Long,Chen Yujin,Tao Hualong,Yao Linwei,Huang Jingtao,Lou Mengsi,Chen Ruixin,Yan Longbin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Dilute magnetic semiconductors;Dederichs;Phase Transit.,2005

2. Chapter 1 materials properties and characterization of SiC;Jrrendahl;Semicond. Semimet.,1998

3. Measurement of electron and hole impact ionization coefficients for SiC;Raghunathan,1997

4. Developments and applications of photoconductive semiconductor switches in pulsed power technology;Yuan;High Power Laser Part. Beams,2008

5. Design, modeling, and characterization of power MOSFET in 4H-SiC for extreme environment applications;Hasanuzzaman,2005

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