Schottky barrier heights and mechanism of charge transfer at metal-Bi2OS2 interfaces-Reference-Cited by-同舟云学术

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Schottky barrier heights and mechanism of charge transfer at metal-Bi2OS2 interfaces

Published:2022-09-30 Issue:2 Volume:66 Page:811-818
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Zhang Xiaodong,Feng Liping,Zhong Shichen,Ye Yuanming,Pan Haixi,Liu Pengfei,Zheng Xiaoqi,Li Huanyong,Qu Mingyang,Wang Xitong

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2183-8.pdf

Reference48 articles.

1. Liu Y, Duan X, Huang Y, et al. Two-dimensional transistors beyond graphene and TMDCs. Chem Soc Rev, 2018, 47: 6388–6409

2. Wong LW, Huang L, Zheng F, et al. Site-specific electrical contacts with the two-dimensional materials. Nat Commun, 2020, 11: 3982

3. Zavabeti A, Aukarasereenont P, Tuohey H, et al. High-mobility p-type semiconducting two-dimensional β-TeO2. Nat Electron, 2021, 4: 277–283

4. Shen PC, Su C, Lin Y, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593: 211–217

5. Zhang X, Liu B, Gao L, et al. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nat Commun, 2021, 12: 1522

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