Contact engineering for 2D Janus MoSSe/metal junctions-Reference-Cited by-同舟云学术

Contact engineering for 2D Janus MoSSe/metal junctions

Published:2024 Issue:2 Volume:9 Page:264-277
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Shu Yu¹,Li Ting¹,Miao Naihua²,Gou Jian³,Huang Xiaochun⁴,Cui Zhou¹,Xiong Rui¹,Wen Cuilian¹^ORCID,Zhou Jian²^ORCID,Sa Baisheng¹^ORCID,Sun Zhimei²^ORCID

Affiliation:

1. Multiscale Computational Materials Facility, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China

2. School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China

3. School of Physics, Zhejiang University, Hangzhou 310058, P. R. China

4. Department of Physics, University of Hamburg, D-20355 Hamburg, Germany

Abstract

This study revealed the transition from Schottky to Ohmic/quasi-Ohmic contacts within the metal–MoSSe junctions and employed machine learning to predict the Schottky barrier, thus facilitating the realization of Ohmic contact in Janus MoSSe devices.

Funder

National Key Research and Development Program of China Stem Cell and Translational Research

Natural Science Foundation of Fujian Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NH/D3NH00450C

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1. Physical and chemical tuning of two-dimensional transition metal dichalcogenides