Room-temperature epitaxial growth of CeO 2 (001) films on YSZ buffered Si(001) substrates-Reference-Cited by-同舟云学术

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Room-temperature epitaxial growth of CeO 2 (001) films on YSZ buffered Si(001) substrates

Published:1998-10-01 Issue:4 Volume:67 Page:455-457
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Trtík V.,Sánchez F.,Aguiar R.,Maniette Y.,Ferrater C.,Varela M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050803.pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices;ACS Applied Electronic Materials;2021-04-13

2. Charge transfer and formation of Ce3+ upon adsorption of metal atom M (M = Cu, Ag, Au) on CeO2 (100) surface;Journal of Power Sources;2013-07

3. Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy;Thin Solid Films;2008-03

4. Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer;Journal of Materials Research;2004-09

5. Proposal of general rule to prepare epitaxial ceramic thin films at low temperature from the point of crystal chemistry;Ceramics International;2004-01

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