Author:
Sasaki Atsushi,Liu Jin,Hara Wakana,Akiba Shusaku,Saito Keisuke,Yodo Tokuo,Yoshimoto Mamoru
Abstract
Room-temperature epitaxy of AlN thin films on sapphire (0001) substrates was achieved by pulsed laser deposition using an epitaxial NiO ultrathin buffer layer (approximately 6 nm thick). Four-circle x-ray diffraction analysis indicates a double heteroepitaxial structure of AlN (0001)/NiO(111)/sapphire (0001) with the epitaxial relationship of AlN [10-10] ‖ NiO [11-2] ‖ sapphire [11-20]. The surface morphology of room-temperature grown AlN thin films was found to be atomically smooth and nanostepped, reflecting the surface of the ultrasmooth sapphire substrate with 0.2-nm-high steps.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
15 articles.
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