Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy-Reference-Cited by-同舟云学术

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Room-temperature growth of AlN/TiN epitaxial multi-layer by laser molecular beam epitaxy

Published:2008-03 Issue:10 Volume:516 Page:2889-2893
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hara Wakana,Liu Jin,Sasaki Atsushi,Otaka Sei,Tateda Norihiro,Saito Keisuke,Yoshimoto Mamoru

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. First laser diodes fabricated from III–V nitride based materials

3. Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices

4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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