Abstract
AbstractUsing our own computer program, we determined the spatial distribution of lattice strains in the HgCdTe heterostructure grown on a GaAs substrate. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bending of the heterostructure is almost completely relaxed by misfit dislocations forming matrixes in the interfaces’ areas. The average distances between dislocation lines in individual interfaces were calculated based on the minimum energy, i.e. elastic energy condition resulting from the interaction of stress fields and deformations caused by lattice misfit, bending and the presence of dislocation plus electrical energy of dislocations.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Capper, P. (ed.): Narrow Gap Cadmium-Based Compounds. INSPECT, IEE, London (1994)
2. Capper, P., Garlan, J. (eds.): Mercury Cadmium Telluride: Growth, Properties and Applications (Wiley Series in Materials for Electronic & Optoelectronic Applications). Wiley, New York (2011)
3. Ciura, L., Kolek, A., Kębłowski, A., Stanaszek, D., Piotrowski, A., Gawron, W., Piotrowski, J.: Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy. Semicond. Sci. Technol. (2016). https://doi.org/10.1088/0268-1242/31/3/035004
4. Gopal, V., Gupta, S.: Effect of dislocations on minority carrier lifetime in HgCdTe. J. Appl. Phys. (2003). https://doi.org/10.1063/1.1644039
5. Gosling, T.J., Bullough, R., Jain, S.C., Willis, J.R.: Misfit dislocation distributions in capped (buried) strained semiconductor layers. J. Appl. Phys. (1993). https://doi.org/10.1063/1.353445
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