Misfit dislocation distributions in capped (buried) strained semiconductor layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353445
Reference20 articles.
1. Structure, properties and applications of GexSi1-xstrained layers and superlattices
2. Stability of strained quantum-well field-effect transistor structures
3. Theoretical comparison of the stability characteristics of capped and uncapped GexSi1−x strained epilayers
4. The energy of an array of dislocations
5. Critical layer thicknesses for inclined dislocation stability in multilayer structures
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