Effect of quantum well thickness and temperature on electrical and optical characteristics of transistor laser using group-IV material
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-023-04720-0.pdf
Reference26 articles.
1. Basu, R., Mukhopadhyay, B., Basu, P.K.: Estimated threshold base current and light power output of a transistor laser with InGaAs quantum well in GaAs base. Semicond. Sci. Technol. 26(10), 105014 (2011)
2. Basu, R., Mukhopadhyay, B., Basu, P.K.: Modeling resonance-free modulation response in transistor lasers with single and multiple quantum wells in the base. IEEE Photonics J. 4(5), 1571–1581 (2012a)
3. Basu, R., Mukhopadhyay, B., Basu, P.K.: Modeling of current gain compression in common emitter mode of a transistor laser above threshold base current. J. Appl. Phys. 111(8), 083103 (2012b)
4. Basu, P.K., Mukhopadhyay, B., Basu, R.: Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base. IET Optoelectron. 7(3), 71–76 (2013)
5. Basu, P.K., Mukhopadhyay, B., Basu, R.: Semiconductor Laser Theory. CRC Press, Boca Raton, USA (2015a)
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