Analytical model for threshold‐base current of a transistor laser with multiple quantum wells in the base-Reference-Cited by-同舟云学术

Analytical model for threshold‐base current of a transistor laser with multiple quantum wells in the base

Author:

Basu Rikmantra¹²,Mukhopadhyay Bratati¹,Basu Prasanta K.¹³

Affiliation:

1. Institute of Radio Physics and Electronics, University of Calcutta92 Acharya Prafulla Chandra RoadKolkata700 009India

2. Centre for Research in Nanoscience and Nanotechnology, University of CalcuttaJD BlockSector IIISalt LakeKolkata700 106India

3. University Grants Commission (UGC)-Basic Scientific Research (BSR) Faculty FellowNew DelhiDelhiIndia

Funder

Ministry of Defence

University Grants Commission

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

Reference20 articles.

1. Ultrafast transistors that output optical and electrical signals open new computing frontier;Holonyak N.;IEEE Spectr.,2006

4. Graded‐base InGaN/GaN heterojunction bipolar light‐emitting transistors;Chu‐Kung B.F.;Appl. Phys. Lett.,2006

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