Semiconductor Laser Theory
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CRC Press
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of quantum well thickness and temperature on electrical and optical characteristics of transistor laser using group-IV material;Optical and Quantum Electronics;2023-04-08
2. Ge‐ and Ge 1− z Sn z ‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors;physica status solidi (a);2023-01-06
3. Performance Analysis of Nitride-Based Tunnel-Injection Transistor Laser;Journal of Russian Laser Research;2022-05
4. Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier density;Journal of Computational Electronics;2021-01-02
5. Calculation of Intrinsic Carrier Density of Ge1−xSnx Alloy, Its Temperature Dependence Around Room Temperature and Its Effect on Maximum Electron Mobility;Computers and Devices for Communication;2021
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