Method to design alternating current light-emitting diodes luminous flux-Reference-Cited by-同舟云学术

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Method to design alternating current light-emitting diodes luminous flux

Published:2015-08-15 Issue:12 Volume:47 Page:3715-3727
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Gao Yingming,Zhang Huanyue,Guo Xu,Cao Fan,Yu Jingjie,Chen Ailin,Zou Nianyu

Funder

2012 key supported project for undergraduate education by Education Dept. of Liaoning province

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11082-015-0241-z.pdf

Reference21 articles.

1. Ao, J.-P., et al.: Monolithic blue LED series arrays for high-voltage AC operation. Phys. Stat. Sol. A 194(2), 376–379 (2002)

2. Cho, J., Jung, J., Chat, J.H., et al.: Alternating current light emitting diodes with a diode bridge circuitry. Jpn. J. Appl. Phys. 46(48), L1194–L1196 (2007)

3. Hsu, Y.-C.: An optimum design and fabrication of lens on luminous uniformity and light extraction of high-power light-emitting diode. Opt. Rev. 18(1), 27–33 (2011)

4. Hwu, F.S., Yang, C.H., Chen, J.C.: Method for measuring the mean junction temperature of alternating current light-emitting diodes. Meas. Sci. Technol. 22(4), 045701 (2011)

5. Jang, S.H., Shin, M.W.: Thermal optimization of high power LED arrays with a fin cooling system. Opt. Quantum Electron. 42(11–13), 679–684 (2011)

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1. Laser regulation for variable color temperature lighting with low energy consumption by microlens arrays;Applied Optics;2021-06-28

2. Understanding multi-domain compact modeling of light-emitting diodes;Cogent Engineering;2021-01-01

3. Chip-Level Degradation of InGaN-Based Optoelectronic Devices;Solid State Lighting Reliability Part 2;2017-07-13

4. Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes;IEEE Electron Device Letters;2016-05

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