Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser-Reference-Cited by-同舟云学术

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Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

Published:2011-03-01 Issue:11-13 Volume:42 Page:659-666
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Shi Wei,Faraji Behnam,Greenberg Mark,Berggren Jesper,Xiang Yu,Hammar Mattias,Lestrade Michel,Li Zhi-Qiang,Li Z. M. Simon,Chrostowski Lukas

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11082-011-9444-0.pdf

Reference32 articles.

1. Alam M.A., Hybertsen M.S., Smith R.K., Baraff G.A.: Simulation of semiconductor quantum well lasers. IEEE Trans. Electron Devices 47, 1917 (2000)

2. Ahrenkiel R.K., Ellingson R., Metzger W.: Auger recombination in heavily carbon-doped GaAs. Appl. Phys. Lett. 78, 1879–1881 (2001)

3. Chuang S.L.: Efficient band structure calculations of strained quantum wells. Phys. Rev. B 43, 9649–9661 (1991)

4. Chen T.R., Utaka K., Yariv , Zhuang Y.H., Liu Y.Y., Yariv A.: Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser. Appl. Phys. Lett. 50, 874–876 (1987)

5. Crosslight Device Simulation Software—A General Description. Crosslight Software Inc. (2005)

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1. Design and simulation of integration of vertical cavity surface emitting lasers and heterojunction bipolar transistor;Acta Physica Sinica;2019

2. AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers;Optics Express;2015-06-05

3. Influence of base-region thickness on the performance of Pnp transistor-VCSEL;Optics Express;2014-10-28

4. Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser;Applied Physics Letters;2013-05-13

5. Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers;SPIE Proceedings;2013-03-13

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