Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803175
Reference12 articles.
1. Quantum-well-base heterojunction bipolar light-emitting transistor
2. Room temperature continuous wave operation of a heterojunction bipolar transistor laser
3. Room-Temperature Continuous-Wave Operation of 1.3-µm Transistor Laser with AlGaInAs/InP Quantum Wells
4. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer
5. Design and epitaxy of 15 μm InGaAsP-InP MQW material for a transistor laser
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1. Effects of base and quantum wells widths variations on technical characteristics of tunneling injection transistor laser;Applied Physics B;2023-07-24
2. AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers;Optics Express;2015-06-05
3. Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers;IEEE Photonics Technology Letters;2015-04-01
4. Influence of base-region thickness on the performance of Pnp transistor-VCSEL;Optics Express;2014-10-28
5. Numerical simulation of the trapped field in MgB2bulk disks magnetized by field cooling;Superconductor Science and Technology;2014-05-15
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