Room-Temperature Continuous-Wave Operation of 1.3-µm Transistor Laser with AlGaInAs/InP Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=7/a=072101/pdf
Reference17 articles.
1. Rationale and challenges for optical interconnects to electronic chips
2. Optical Packet and Burst Switching Technologies for the Future Photonic Internet
3. InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies
4. High speed quantum-well lasers and carrier transport effects
5. Quantum capture and escape in quantum-well lasers-implications on direct modulation bandwidth limitations
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1. Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C;Japanese Journal of Applied Physics;2020-04-01
2. Effect of separate confinement hetero-structure layer on tunnel injection transistor laser-based transmitter for high-speed optical communication networks;Optics & Laser Technology;2019-07
3. Tunnel injection transistor laser for optical interconnects;Optical and Quantum Electronics;2018-03
4. Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate;Japanese Journal of Applied Physics;2017-12-14
5. Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser;Applied Physics Letters;2013-05-13
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