Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98018
Reference10 articles.
1. A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser
2. Monolithic integration of a GaAlAs buried‐heterostructure laser and a bipolar phototransistor
3. High-current InGaAsP-InP phototransistors and some monolithic optical devices
4. Integrated optical devices of InGaAsP/InP heterojunction phototransistor and inner stripe light-emitting diode
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2. Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser;Optical and Quantum Electronics;2011-03-01
3. Vertical integration of an InGaAs/InP HBT and a 1.55 µm strained MQW p-substrate laser;IEE Proceedings - Optoelectronics;1996-02-01
4. Optical Interconnects in Electronic Processing Systems;Photonics in Switching;1993
5. Heterostructure Bipolar Transistors;Physics of High-Speed Transistors;1993
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