Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface fermi level shifts-Reference-Cited by-同舟云学术

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Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface fermi level shifts

Published:1998-08 Issue:8 Volume:27 Page:L54-L57
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Bolognesi C. R.,Dvorak M. W.,Chow D. H.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0136-x.pdf

Reference10 articles.

1. C.R. Bolognesi, E.J. Caine and H. Kroemer, IEEE Electron Device Lett. 15, 16 (1994).

2. C.R. Bolognesi and D.H. Chow, IEEE Electron Device Lett. 17, 534 (1996).

3. M.W. Dvorak, C.R. Bolognesi and D.H. Chow, Electron. Lett. 32, 2273 (1996).

4. J.D. Werking, C.R. Bolognesi, L.D. Chang, C. Nguyen, E.L. Hu and H. Kroemer, IEEE Electron Device Lett. 13, 164 (1992).

5. C.R. Bolognesi, J.D. Werking, E.J. Caine, E.L. Hu and H. Kroemer, IEEE Electron Device Lett. 14, 13 (1993).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metamorphic InAsyP1−y (y=0.30–0.75) and AlδIn1−δAsyP1−y buffer layers on InP substrates;Applied Physics Letters;2007-05-21

2. Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs;Semiconductor Science and Technology;2005-06-16

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