Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications-Reference-Cited by-同舟云学术

Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Published:1997-03 Issue:3 Volume:26 Page:212-216
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Tin C. C.,Song Y.,Isaacs Smith T.,Madangakli V.,Sudarshan T. S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-997-0153-1.pdf

Reference9 articles.

1. J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper,Jr., J.W. Palmour and K.G. Irvine, J. Electron. Mater. 24, 303 (1995).

2. L.A. Lipkin and J.W. Palmour, J. Electron. Mater. 25, 909 (1996).

3. S. Sridevan, V. Misra, P.K. McLarty, B.J. Baliga and J.J. Wortman, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 645.

4. J.N. Shenoy, M.K. Das, G.L. Chindalore, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour and K.G. Irvine, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 745.

5. C.I. Harris, M.O. Aboelfotoh, R.S. Kern, S. Tanaka and R.F. Davis, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 777.

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